1. Product Scientific Research and Structural Stability
1.1 Crystal Chemistry and Bonding Characteristics
(Silicon Carbide Crucibles)
Silicon carbide (SiC) is a covalent ceramic composed of silicon and carbon atoms prepared in a tetrahedral lattice, mainly in hexagonal (4H, 6H) or cubic (3C) polytypes, each displaying remarkable atomic bond stamina.
The Si– C bond, with a bond energy of about 318 kJ/mol, is amongst the best in structural porcelains, conferring impressive thermal stability, hardness, and resistance to chemical attack.
This robust covalent network results in a product with a melting factor surpassing 2700 ° C(sublimes), making it one of the most refractory non-oxide ceramics readily available for high-temperature applications.
Unlike oxide porcelains such as alumina, SiC preserves mechanical toughness and creep resistance at temperature levels over 1400 ° C, where many steels and standard ceramics begin to soften or weaken.
Its low coefficient of thermal growth (~ 4.0 × 10 ⁻⁶/ K) incorporated with high thermal conductivity (80– 120 W/(m · K)) allows fast thermal biking without disastrous splitting, a vital quality for crucible efficiency.
These inherent homes stem from the well balanced electronegativity and comparable atomic sizes of silicon and carbon, which promote a highly stable and densely loaded crystal structure.
1.2 Microstructure and Mechanical Strength
Silicon carbide crucibles are normally fabricated from sintered or reaction-bonded SiC powders, with microstructure playing a definitive role in longevity and thermal shock resistance.
Sintered SiC crucibles are created via solid-state or liquid-phase sintering at temperature levels over 2000 ° C, typically with boron or carbon additives to boost densification and grain limit cohesion.
This procedure generates a fully thick, fine-grained framework with very little porosity (
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